Nitridation of an unreconstructed and reconstructed (square 31 x square 31)R +/- 9 degrees (0001) sapphire surface in an ammonia flow

作者：Milakhin D S^*; Malin T V; Mansurov V G; Galitsin Yu G; Zhuravlev K S

来源：Semiconductors, 2015, 49(7): 905-910.

DOI：10.1134/S1063782615070180

This paper is devoted to the study of the nitridation of unreconstructed and reconstructed (ae31 xae31)R +/- 9A degrees (0001) sapphire surfaces in an ammonia flow by reflection high-energy electron diffraction (RHEED). The experimental results show that sapphire nitridation occurs on the unreconstructed (1 x 1) surface, which results in AlN phase formation on the substrate surface. However, if sapphire nitridation is preceded by high-temperature annealing (1150A degrees C) resulting in sapphire surface reconstruction with formation of the (ae31 xae31)R +/- 9A degrees surface, the crystalline AlN phase on the sapphire surface is not formed during surface exposure to an ammonia flow.

• 出版日期2015-7