A catalyst-free method to silicon nanowires at relative low temperature

作者:Zhu, Hui-Ling; Lun, Ning; Zhang, Zheng; Liu, Rui; Meng, Xiang-Lin; Zhang, Bo; Han, Fu-Dong; Bai, Yu-Jun*; Bi, Jian-Qiang; Fan, Run-Hua
来源:Journal of Crystal Growth, 2010, 312(24): 3579-3582.
DOI:10.1016/j.jcrysgro.2010.09.063

摘要

Well-crystallized straight Si nanowires (SiNWs) were successfully prepared in large scale via a facile reaction between NaN3 and Na2SiF6 at 600 degrees C without using any catalyst Characterization by X-ray powder diffraction and transmission electron microscopy demonstrates that the as-obtained product is pure-phase cubic SiNWs with diameters of 40 nm or so and lengths of several micrometers And the SiNWs with spherical tips can be obtained at a temperature as low as 300 degrees C Heating temperature and hol