A theory study of the multiplication characteristics of InP/InGaAs avalanche photodiodes with double multiplication layers and double charge layers

作者：Liu, Guipeng^*; Chen, Wenjie; Liu, Linsheng; Jin, Peng; Tian, Yonghui; Yang, Jianhong

来源：Optics Communications, 2016, 374: 114-118.

DOI：10.1016/j.optcom.2016.04.036

• In0.53Ga0.47As/InP avalanche photodiodes (APD)
• Dead space
• Excess noise factor
• Mean gain

An In0.53Ga0.47As/InP avalanche photodiodes (APD) structure with double multiplication layers and double charge layers has been proposed. The calculated results with considering the dead space effect show that a thin 2nd multiplication layer will reduce the excess noise factor F in this structure for a fixed mean gain < G >. And its performances will reach the best when the 2nd multiplication layer is 0.01 um, which will reduce the excess noise factor 7% compared to a conventional APD for < G > =10. The effects of 1st and 2nd charge layers on the APD have also been studied in this paper.

• 出版日期2016-9-1
• 单位兰州大学; 中国科学院