A 2.1 GHz 30 dBm power amplifier in 0.18 m SiGe BiCMOS process

作者：Li, Zhiqun^*; He, Shidong; Zhu, Bihui; Zhang, Chi

来源：Microwave and Optical Technology Letters, 2018, 60(4): 834-840.

DOI：10.1002/mop.31066

• cascode
• power amplifier
• power combination
• pseudo-differential structure
• SiGe BiCMOS

A cascode power amplifier (PA) fabricated in 0.18 m SiGe BiCMOS technology is presented. The cascode structure is used to provide high voltage gain and high output power. To prevent the negative impact of bond wire, the pseudo-differential structure is used to provide a virtual ground for signal. Adaptive bias circuit provides stable voltage bias to the base of common-emitter. With the combination of two completely symmetrical PA units, the whole PA achieves its saturated output power of 30.62 dBm and PAE of 31.75% at 2.1 GHz, and the small signal gain is 26.19 dB.

• 出版日期2018-4
• 单位东南大学