摘要

The air-stable doping of transition-metal dichalcogenides is important in enabling a wide range of optoelectronic and electronic devices while exploring basic material properties. In this work, we develop for the first time a simple, low-cost synthesis route to preparing boron-and-nitrogen-doped WS2 (B, N-WS2) nanosheets. Bulk WS2, a prototypical transition-metal chalcogenide material, is an indirect band-gap semiconductor with negligible photoluminescence. The obtained B, N-WS2 nanosheets exhibited enhanced fluorescence. The B, N-WS2 nanosheets can be used as a green and easy sensing platform for the label-free detection of Hg2+ because of the high sensitivity and selectivity toward Hg2+. Detection can also be easily accomplished through a rapid, one-step (within 1 min) operation, with a limit as low as 23 nM (S/N = 3).