Analysis of electrical characteristics of Er/p-InP Schottky diode at high temperature range

作者：Kumar A Ashok; Rao L Dasaradha; Reddy V Rajagopal^*; Choi Chel Jong

来源：Current Applied Physics, 2013, 13(6): 975-980.

DOI：10.1016/j.cap.2013.01.046

• Electrical properties
• Er/p-InP Schottky contact
• Interface states density
• Schottky and Poole-Frenkel emissions

We report on the temperature-dependent electrical characteristics of Er/p-InP Schottky barrier diodes. The current-voltage (I-V) and capacitance-voltage (C-V) measurements have been carried out in the temperature range of 300-400 K. Using thermionic emission (TE) theory, the zero-bias barrier height (Phi(bo)) and ideality factor (n) are estimated from I-V characteristics. It is observed that there is a decrease in n and an increase in the Fbo with an increase in temperature. The barrier height inhomogenity at the metal/semiconductor (MS) interface resulted in Gaussian distribution of Phi(bo) and n. The laterally homogeneous Schottky barrier height value of approximately 1.008 eV for the Er/p-InP Schottky barrier diodes is extracted from the linear relationship between the experimental zero-bias barrier heights and ideality factors. The series resistance (R-s) is calculated by Chenug%26apos;s method and it is found that it increases with the decrease in temperature. The reverse-bias leakage current mechanism of Er/p-InP Schottky diode is investigated. Both Poole-Frenkel and Schottky emissions are described and discussed. Furthermore, capacitance-voltage (C-V) measurements of the Er/p-InP Schottky contacts are also carried out at room temperature in dark at different frequencies of 10, 100 and 1000 kHz. Using Terman%26apos;s method, the interface state density is calculated for Er/p-InP Schottky diode at different temperatures.

• 出版日期2013-8