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摘要
The deep depletion behaviors in the C-V curves of metal-oxide-semiconductor (MOS) structure with various gate areas are studied. A model with three regions of depletion-inversion, edge deep depletion, and bulk deep depletion was proposed. The larger gate area shows a larger effective uniform area ratio K(eff) than the smaller one. The effective non-uniform edge width X(eff) was extracted according to the data of two various gate areas. The extracted X(eff')s at large bias for three areas are used to simulate the experimental data further, and the results are satisfactory for devices with three gate areas in bulk deep depletion region.
- 出版日期2011-12-1
- 单位中国科学院电工研究所
