摘要
Laser-assisted atom probe microscopy of 2 nm period Si-28/Si-30 isotope superlattices (SLs) is reported. Three-dimensional distributions of Si-28 and Si-30 stable isotopes are obtained with sub-nanometer spatial resolution. The depth resolution of the present atom probe analysis is much higher than that of secondary ion mass spectrometry (SIMS) even when SIMS is performed with a great care to reduce the artifact due to atomic mixing. Outlook of Si isotope SLs as ideal depth scales for SIMS and three-dimensional position standards for atom probe microscopy is discussed.
- 出版日期2009-10-1