摘要

In this article, a Doherty power amplifier (DPA) based on the dual-level supply voltage modulation is proposed. To improve efficiency, the drain of the carrier amplifier in the DPA is supplied with two different voltage levels based on the input RF power. The switching between these two different voltage levels is modulated by a voltage control circuit. The DPA is fabricated using two LDMOSFETs at the working frequency of 2.14 GHz. The measured results show that, compared with the conventional DPA, the power-added efficiency (PAE) has been enhanced at low RF input power, and the feasibility of the proposed method has been verified.

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