A novel SEU tolerant SRAM data cell design

作者：Zhang Guohe^*; Zeng Yunlin; Liang Feng; Chen Kebin

来源：IEICE Electronics Express, 2015, 12(17): 20150504.

DOI：10.1587/elex.12.20150504

• single event upset
• radiation-hardened SRAM

An improved SEU tolerant SRAM data cell design is presented here. The cell enhances the capability of SEU tolerance by creating spatial redundancy of data and virtue of latch design. The results show that our proposed design achieves high resilience to SEU and provides a 300 times increase in critical charge compared to standard 6T cell without much degradation in speed and Power dissipation. It shows that our design is very suitable for applying in high-reliability circuit and system design.

• 出版日期2015-9-10
• 单位西安交通大学; 中国人民解放军国防科学技术大学