Ultra-Sensitive Capacitive Detection Based on SGMOSFET Compatible With Front-End CMOS Process

作者：Colinet Eric^*; Durand Cedric; Duraffourg Laurent; Audebert Patrick; Dumas Guillaume; Casset Fabrice; Ollier Eric; Ancey Pascal; Carpentier Jean Francois; Buchaillot Lionel; Ionescu Adrian M

来源：IEEE Journal of Solid-State Circuits, 2009, 44(1): 247-257.

DOI：10.1109/JSSC.2008.2007448

• Capacitance measurement
• front-end CMOS co-integration
• in-plane suspended-gate MOSFET
• lateral SGMOSFET
• nanodisplacement measurement
• NEMS devices

Capacitive measurement of very small displacement of nano-electro-mechanical systems (NEMS) presents some issues that are discussed in this article. It is shown that performance is fairly improved when integrating on a same die the NEMS and CMOS electronics. As an initial step toward full integration, an in-plane suspended gate MOSFET (SGMOSFET) compatible with a front-end CMOS has been developed. The device model, its fabrication, and its experimental measurement are presented. Performance obtained with this device is experimentally compared to the one obtained with a stand-alone NEMS readout circuit, which is used as a reference detection system. The 130 nm CMOS ASIC uses a bridge measurement technique and a high sensitive first stage to minimize the influence of any parasitic capacitances.

• 出版日期2009-1
• 单位中国地震局