A simple route to large scale synthesis of crystalline alpha-Si3N4 nanowires

作者：Xie T^*; Wu GS; Geng BY; Jiang Z; Yuan XY; Lin Y; Wang GZ; Zhang LD

来源：Applied Physics A-Materials Science & Processing, 2005, 80(5): 1057-1059.

DOI：10.1007/s00339-003-2359-2

Crystalline alpha-Si3N4 nanowires were simply prepared by heating a silicon wafer at 1250 degrees C in a flowing NH3 and N-2 atmosphere. The obtained nanowires are straight and uniform with diameters of 30-100 nm and of lengths up to tens of microns. The possible reactions in the synthesis process are discussed. The growth mechanism of the nanowires is vapor-solid (VS) process.

• 出版日期2005-2
• 单位合肥工业大学; 中国科学院