Bi-induced band gap reduction in epitaxial InSbBi alloys

作者：Rajpalke M K; Linhart W M; Yu K M; Birkett M; Alaria J; Bomphrey J J; Sallis S; Piper L F J; Jones T S; Ashwin M J^*; Veal T D

来源：Applied Physics Letters, 2014, 105(21): 212101.

DOI：10.1063/1.4902442

The properties of molecular beam epitaxy-grown InSb1-xBix alloys are investigated. Rutherford backscattering spectrometry shows that the Bi content increases from 0.6% for growth at 350 degrees C to 2.4% at 200 degrees C. X-ray diffraction indicates Bi-induced lattice dilation and suggests a zinc-blende InBi lattice parameter of 6.626 angstrom. Scanning electron microscopy reveals surface InSbBi nanostructures on the InSbBi films for the lowest growth temperatures, Bi droplets at intermediate temperatures, and smooth surfaces for the highest temperature. The room temperature optical absorption edge was found to change from 172 meV (7.2 mu m) for InSb to similar to 88 meV (14.1 mu m) for InSb0.976Bi0.024, a reduction of similar to 35 meV/% Bi.

• 出版日期2014-11-24