A Word Line Pulse Circuit Technique for Reliable Magnetoelectric Random Access Memory

作者：Lee Hochul^*; Lee Albert; Wang Shaodi; Ebrahimi Farbod; Gupta Puneet; Amiri Pedram Khalili; Wang Kang L

来源：IEEE Transactions on Very Large Scale Integration Systems, 2017, 25(7): 2027-2034.

DOI：10.1109/TVLSI.2017.2670502

• Magnetic tunnel junction (MTJ)
• magnetoelectric random access memory (MeRAM)
• voltage controlled magnetic anisotropy (VCMA)
• word line pulse (WLP)
• write error rate (WER)

A word line pulse (WLP) circuit scheme is proposed toward the implementation of magnetoelectric random access memory (MeRAM). The circuit improves the write error rate (WER) and cell area efficiency by generating a better write pulse compared to conventional bitline pulse (BLP) techniques in terms of the pulse slew rate and amplitude. For the voltage-controlled magnetic anisotropy-induced precessional switching of the magnetic tunnel junction (MTJ), the write pulse shape has a large impact on the switching probability. Typically, a square shape pulse results in higher switching probability compared to that of a triangular shape pulse with long rise and falling edges, since the square shape pulse causes a more stable precessional trajectory of the free layer magnetization by providing a relatively constant in-plane-dominant effective field. Compared to the BLP scheme, the WLP can generate a better square shape pulse by eliminating discharge paths under the pulse condition, using the gain of the access transistor, and effectively diminishing the capacitive loading which needs to be driven. A macrospin compact model of voltage-controlled MTJ shows that the WLP can improve WER by 107 times and allow MeRAM to have four-time improvement in area efficiency of driver circuits compared to the BLP.

• 出版日期2017-7