摘要

In this paper, we derive an analytical expression for the screened Coulomb potential between charge carriers in quasi-one-dimensional (Q1D) semiconductor structures. As an application, this potential has been used to investigate the screening effect on the binding energy of a neutral donor (D) in quantum wires (QWRs). It is found that the screening effect decreases the neutral donor binding energy, and the screening effects are more obvious in wide QWRs than that in narrow ones. Dependence of screening length on temperature and carrier concentration has also been discussed.

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