摘要
A double-gate device is used to demonstrate that a blended formulation of semiconducting small molecules and a polymer matrix can provide high electrical performance within thin-film field-effect transistors (OTFTs) with charge carrier mobilities of greater than 2cm(2) V(-1) s(-1), good device-to-device uniformity, and the potential to fabricate devices from routine printing techniques.
- 出版日期2009-3-20