科研之友
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摘要
We demonstrate a semiconductor double-chirped mirror consisting of an AlAs/GaAs multilayer stack grown by molecular beam epitaxy. The mirror has a high negative group velocity dispersion of -2450 +/- 100 fs(2) and a reflectivity exceeding 98.9% over the spectral range spanning +/- 4 nm around 1035 nm. When used to compensate the cavity dispersion in a diode-pumped femtosecond Yb:KY (WO4)(2) oscillator, at 490 mW of the absorbed pump power, the laser delivered 110 mW in pulses of 240 fs duration.
- 出版日期2013-8
