科研之友
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摘要
One method to realize a concurrent dual-band (DB) high-efficiency power amplifier (PA) with a novel harmonic control network is presented. The same structures are used in harmonic trap and biasing circuits, which largely simplify the design procedure. The proposed harmonic control network can transfer the optimum fundamental and second-harmonic impedances of the transistor to 50 Omega load simultaneously at the two desired frequencies. Offset double-sided parallel strip lines are introduced to realize the high impedance lines in the harmonic trap and biasing circuits. For demonstration, a PA using Cree CCH40010 GaN HEMT is designed at 1.9 and 3.3 GHz with up to second-harmonic control. The realized DB PA achieves a peak power-added efficiency of 78.5% and 76.7%, respectively, while an output power of 39.9 and 393 dBm are delivered by the PA at the measured frequencies of 1.84 and 3.22 GHz.
