Normally-Off Diamond Junction Field-Effect Transistors With Submicrometer Channel

作者：Suwa Taisuke; Iwasaki Takayuki; Sato Kazuki; Kato Hiromitsu; Makino Toshiharu; Ogura Masahiko; Takeuchi Daisuke; Yamasaki Satoshi; Hatano Mutsuko^*

来源：IEEE Electron Device Letters, 2016, 37(2): 209-211.

DOI：10.1109/LED.2015.2513074

• Diamond
• junction field-effect transistors (JFETs)
• normally-off

We developed normally-off diamond junction field-effect transistors with narrow channel widths. The p-channel device with the narrowest channel width of 0.26 mu m showed a large threshold voltage of -3 V. The obtained threshold voltage is consistent with the value estimated by considering the tapered channel width and the gradual-doping in the channel, which were measured by secondary ion mass spectrometry and cross-sectional transmission electron microscopy. We confirmed that the threshold voltage can be well controlled by the channel width.

• 出版日期2016-2