Development of Ultrahigh-Voltage SiC Devices

作者：Fukuda Kenji^*; Okamoto Dai; Okamoto Mitsuo; Deguchi Tadayoshi; Mizushima Tomonori; Takenaka Kensuke; Fujisawa Hiroyuki; Harada Shinsuke; Tanaka Yasunori; Yonezawa Yoshiyuki; Kato Tomohisa; Katakami Shuji; Arai Manabu; Takei Manabu; Matsunaga Shinichiro; Takao Kazuto; Shinohe Takashi; Izumi Toru; Hayashi Toshihiko; Ogata Syuuji; Asano Katsunori; Okumura Hajime; Kimoto Tsunenobu

来源：IEEE Transactions on Electron Devices, 2015, 62(2): 396-404.

DOI：10.1109/TED.2014.2357812

• n-type insulated-gate bipolar transistors (IGBTs)
• p-i-n
• p-type IGBTs
• package technology
• silicon carbide (SiC)
• switching test
• ultrahigh voltage

Ultrahigh-voltage silicon carbide (SiC) devices [p-i-n diodes and insulated-gate bipolar transistors (IGBTs)] and switching test have been investigated. As a result, we have succeeded in developing a 13-kV p-i-n diode, 15-kV p-channel IGBT, and 16-kV flip-type n-channel implantation and epitaxial IGBT with a low differential specific on-resistance (R-diff,R-on). It was revealed that a power module fabricated using a nanotech resin, Si3N4 ceramic substrate, and W base plate was suitable for ultrahigh voltage and high temperature. A switching test was carried out using a clamped inductive load circuit, which indicated that the energy loss of a circuit with ultrahigh-voltage SiC devices is lower than that of Si devices.

• 出版日期2015-2