Advanced PBTI reliability with 0.69 nm EOT GdHfO gate dielectric

作者：Cho Moonju^*; Aoulaiche Marc; Degraeve Robin; Kaczer Ben; Kauerauf Thomas; Ragnarsson Lars Ake; Adelmann Christoph; Van Elshocht Sven; Hoffmann Thomas Y; Groeseneken Guido

来源：Solid-State Electronics, 2011, 63(1): 5-7.

DOI：10.1016/j.sse.2011.06.001

• PBTI
• Thin EOT
• Dielectric reliability
• SILC

The reliability of 0.69 nm EOT GdHfO dielectric with metal gate is investigated. The threshold voltage shift at identical PBTI stress conditions is only 20% of the shift of a 0.78 nm EOT HfO(2) + La(2)O(3) (or HfLaO) device. The resulting reliable gate over-drive at 10 years of this GdHfO device is 0.85 V. Analysis of the stress induced leakage current (SILC) shows that the improved PBTI in the GdHfO device is related to the reduced trap generation under low bias stress, which already exists in the HfLaO device.

• 出版日期2011-9