Anderson Insulators in Self-Assembled Gold Nanoparticles Thin Films: Single Electron Hopping between Charge Puddles Originated from Disorder

作者：Jiang Cheng Wei; Ni I Chih; Hsieh Yun Lien; Tzeng Shien Der; Wu Cen Shawn; Kuo Watson^*

来源：Materials, 2017, 10(6): 645.

DOI：10.3390/ma10060645

• nanoparticles
• metal-insulator transition
• Anderson localization

The Anderson insulating states in Au nanoparticle assembly are identified and studied under the application of magnetic fields and gate voltages. When the inter-nanoparticle tunneling resistance is smaller than the quantum resistance, the system showing zero Mott gap can be insulating at very low temperature. In contrast to Mott insulators, Anderson insulators exhibit great negative magnetoresistance, inferring charge delocalization in a strong magnetic field. When probed by the electrodes spaced by similar to 200 nm, they also exhibit interesting gate-modulated current similar to the multi-dot single electron transistors. These results reveal the formation of charge puddles due to the interplay of disorder and quantum interference at low temperatures.

• 出版日期2017-6
• 单位东华大学