Analytical Approach for SiGe HBT Static Frequency Divider Design for Millimeter-Wave Frequency Operation

作者：Dyskin Aleksey^*; Kallfass Ingmar

来源：IEEE Transactions on Microwave Theory and Techniques, 2018, 66(3): 1411-1417.

DOI：10.1109/TMTT.2017.2775244

• Analytical models
• E-band
• frequency divider
• heterojunction bipolar transistors (HBTs)
• injection-locked oscillators
• millimeter-wave (mmw) integrated circuits
• silicon germanium (SiGe)

This paper presents a new analytic approach for static frequency divider design. It consists of derivations of analytic expressions for the self-oscillation frequency and frequency divider oscillation condition, based on the device-level circuit parameters only. Additionally, an analytic expression for frequency divider sensitivity is obtained based on injection-locking theory. The proposed approach is verified against measurement results of a static frequency divider, fabricated in SiGe BiCMOS 0.13-mu m process. This approach enables fast preliminary frequency divider design based on time-and resource-efficient simulations.

• 出版日期2018-3