Advanced selective emitter structures by laser opening technique for industrial mc-Si solar cells

作者：Ho J J^*; Cheng Y T; Liou J J; Lin C H; Dimitrov D Z; Hsu A; Tsai S Y; Wang C K; Lee W; Wang K L

来源：Electronics Letters, 2010, 46(23): 1559-1560.

DOI：10.1049/el.2010.2471

A laser opening technique is employed as the photolithography process to form selective emitter (SE) structures on multi-crystalline silicon (mc-Si) substrates for the large-area (156 x 156 mm(2)) solar-cell industry. The best efficiency of 16.35% is obtained with the developed SE structure after a damage removal process with optimisation of heavily and lightly doped dopants, which yields a gain of 0.88% absolute compared with that of a reference cell. Significantly, the SE mc-Si solar cell without the damage removal process can also reach a gain of 0.48% absolute. The developed SE process has simplicity, reliability, is fast, cost-effective, and could be effectively applied to mass production in industrial applications.

• 出版日期2010-11-11