科研之友
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摘要
The anomalous Nernst effect in a perpendicularly magnetized L1(0)-ordered epitaxial FePt(001) thin film has been investigated, and the anomalous Nernst coefficient and the anomalous Nernst angle of the FePt thin film were experimentally evaluated. Furthermore, the voltage due to the anomalous Nernst effect in the spin-Hall device was simulated by the finite element method. A good agreement between the experiment and the simulation was found. It was revealed that the anomalous Nernst effect could be quantitatively discussed even in nanoscale devices.
- 出版日期2012-9
