An analytical model for silicon-on-insulator reduced surface field devices with semi-insulating polycrystalline silicon shielding layer

作者：Ho Chi Hon^*; Liao Chien Nan; Chien Feng Tso; Tsai Yao Tsung

来源：Japanese Journal of Applied Physics, 2008, 47(7): 5369-5373.

DOI：10.1143/JJAP.47.5369

• SOI
• RESURF
• SIPOS
• shielding layer
• MEDICI

An analytical model is presented to determine the potential and electric field distribution along the semiconductor Surface of new silicon-on-insulator (SOI) reduced surface field (RESURF) device. The SOI structure is characterized by a semi-insulating polycrystalline silicon (SIPOS) layer inserted between a silicon layer and a buried oxide. An improvement ill the breakdown voltage due to the presence of the SIPOS shielding layer is demonstrated. Numerical simulations using MEDICI are shown to Support the analytical model.

• 出版日期2008-7
• 单位中央民族大学