Ar+ bombardment of 193 nm photoresist: Morphological effects

作者：Pargon E; Nest D; Graves D B^*

来源：Journal of Vacuum Science and Technology B, 2007, 25(4): 1236-1243.

DOI：10.1116/1.2747630

We present results from an experimental study of At+ beam exposure on 193 nm methacrylate-based photoresist at 500, 1000, and 2000 eV and a range of angles of incidence from normal incidence to 80 degrees, from normal. The initial sputtering yield decreases with ion fluence until reaching a steady value at all energies and angles. The sputtering yield peaks near 80 degrees at steady state for all energies. Atomic force microscope measurements after ion beam exposure reveal that photoresist surface texture remains smooth for angles of incidence from normal to about 40 degrees. Various surface roughening features emerge at higher angles of incidence for fluences above about 10(15) ions cm(-2). Surface roughening is observed for selected ranges of impact angles and fluences. Distinct holes are observed for some conditions. Longitudinal ripples, resembling striations, are observed for ion angles of incidence above about 70 degrees, and may be related to sidewall striations observed in plasma etching of holes and trenches.

• 出版日期2007-8
• 单位中国地震局