Analysis of high voltage LDMOS power consumption
2nd IEEE Conference on Industrial Electronics and Applications (ICIEA 2007), 2007-5-23 ~ 2007-5-25, pp 888-890, 2007
According to the high voltage LDMOS macromodel established in previous work, the inverter consists of LDMOS with high resistance drift region was analyzed. A formulation was presented to solve the power consumption of LDMOS power integrated circuits. The results are shown in good agreement with the simulation values by the two-dimensional numerical simulator MEDICI. Finally, a method to reduce circuit power consumption was presented.