A Planar, Chip-Based, Dual-Beam Refractometer Using an Integrated Organic Light-Emitting Diode (OLED) Light Source and Organic Photovoltaic (OPV) Detectors

作者：Ratcliff Erin L; Veneman P Alex; Simmonds Adam; Zacher Brian; Huebner Daniel; Saavedra S Scott^*; Armstrong Neal R

来源：Analytical Chemistry, 2010, 82(7): 2734-2742.

DOI：10.1021/ac9026109

We present a simple chip-based refractometer with a central organic light-emitting diode (OLED) light source and two opposed organic photovoltaic (OPV) detectors on an internal reflection element (IRE) substrate, creating a true dual-beam sensor platform. For first-generation platforms, we demonstrate the use of a single heterojunction OLED based on electroluminescence from an Alq(3)/TPD heterojunction (tris-(8-hydroxyquinoline)-aluminum/N,N'-bis(3-methylpheny1)-N,N'-diphenyl-benzidine) and light detection with planar heterojunction pentacene/C(60) OPVs. The sensor utilizes the considerable fraction of emitted light from conventional thin-film OLEDs that is coupled into guided modes in the IRE, instead of into the forward (display) direction. A ray-optics description is used to describe light throughput and efficiency-limiting factors for light coupling from the OLED into the substrate modes, light traversing through the IRE substrate, and light coupling into the OPV detectors. The arrangement of the OLED at the center of the chip provides for two sensing regions: a "sample" channel and a "reference" channel, with detection of light by independent OPV detectors. This configuration allows for normalization of the sensor response against fluctuations in OLED light output, stability, and local fluctuations (temperature) that might influence sensor response. The dual-beam configuration permits significantly enhanced sensitivity to refractive index changes, relative to single-beam protocols, and is easily integrated into a field-portable instrumentation package. Changes in refractive index (SRI) between 10(-2) and 10(-3) RI units could be detected for single beam operation, with sensitivity increased to Delta RI approximate to 10(-4) RI units when the dual-beam configuration is employed.

• 出版日期2010-4-1