科研之友
微信
新浪微博
Facebook
分享链接
摘要
A compact physical model for the operation of polycrystalline pentacene thin-film transistors is presented here, valid in both linear and saturation regimes by including the Gaussian energy distribution of the grain-boundary traps. The effect of the temperature is also taken into account. The proposed model has been verified by comparing the simulated results with the experimental data.
- 出版日期2010-1-15
