摘要
High temperature operation (250-340K) of short-wavelength interband cascade infrared photodetectors (ICIPs) with InAs/GaSb/Al0.2In0.8Sb/GaSb superlattice absorbers has been demonstrated with a 50% cutoff wavelength of 2.9 mu m at 300 K. Two ICIP structures, one with two and the other with three stages, were designed and grown to explore this multiple-stage architecture. At lambda = 2.1 mu m, the two- and three-stage ICIPs had Johnson-noise-limited detectivities of 5.1 x 10(9) and 5.8 x 10(9) cmHz(1/2)/W, respectively, at 300 K. The better device performance of the three-stage ICIP over the two-stage ICIP confirmed the advantage of more stages for this cascade architecture. An Arrhenius activation energy of 450meV is extracted for the bulk resistance-area product, which indicates the dominance of the diffusion current at these high temperatures.
- 出版日期2016-1-14