摘要
We introduce high performance, low-temperature (<300 degrees C), and aqueous precursor-derived ZnO thin film transistors (TFTs) with alkali earth metal doping. Ca-doped ZnO TFTs exhibited excellent electrical performance with a field effect mobility of 6 cm(2) V-1 s(-1) and an on/off current ratio of 10(7). The origin of the enhancement in electrical properties by alkali earth metal dopants in ZnO was also investigated.
- 出版日期2013