About Ge(Mn) diluted magnetic semiconductor

作者:Portavoce A*; Bertaina S; Abbes O; Chow L; Le Thanh V
来源:Materials Letters, 2014, 119: 68-70.
DOI:10.1016/j.matlet.2014.01.021

摘要

Deposition of 0.5 monolayer of Mn by molecular beam epitaxy on the surface of a Ge(0 0 1) substrate, and annealing, allowed the fabrication of a cluster-free Ge(Mn) diluted solution. Electronic spin resonance (ESR) was used to study the magnetic properties of this solution. These measurements, combined with secondary ion mass spectrometry, atomic force microscopy, and Auger electron spectroscopy, show that the detected ferromagnetic signal is due to surface islands, while Mn atoms on Ge substitutional sites gives no detectable ESR signal.

  • 出版日期2014-3-15