摘要

Visible photoluminescence (PL) from laser-etched silicon nanostructures has been analysed. A systematic size dependence study of PL from silicon nanostructures has been performed. The PL from these structures is attributed to the quantum confinement effect. Different quantum confinement models have been used for PL and Raman lineshape fitting to calculate the mean size and size distribution of silicon nanostructures and the results are comparatively studied. Calculated values of oscillator strength and radiative lifetime show that PL is due to radiative recombination of confined excitons.

  • 出版日期2013-6