Nitrogen Plasma Processing of SiO2/4H-SiC Interfaces

作者：Modic A^*; Sharma Y K; Xu Y; Liu G; Ahyi A C; Williams J R; Feldman L C; Dhar S

来源：Journal of Electronic Materials, 2014, 43(4): 857-862.

DOI：10.1007/s11664-014-3022-8

• Silicon carbide
• nitrogen plasma passivation
• interface trap
• density
• field-effect mobility

A nitrogen plasma annealing process for gate dielectric applications in 4H-SiC metal oxide semiconductor (MOS) technology has been investigated. This process results in substantially greater interfacial N coverage at the SiO2/4H-SiC interface and lower interface trap densities than the state-of-the-art nitric oxide (NO) annealing process. Despite these exciting results, the field-effect mobility of MOS field-effect transistors (MOSFETs) fabricated by use of this process is very similar to that of NO-annealed MOSFETs. These results emphasize the importance of understanding mobility-limiting mechanisms in addition to charge trapping in next-generation 4H-SiC MOSFETs.

• 出版日期2014-4