Alcohol-assisted photoetching of silicon carbide with a femtosecond laser

作者:Li, Cunxia; Shi, Xu; Si, Jinhai*; Chen, Tao; Chen, Feng; Liang, Shixiong; Wu, Zhaoxin; Hou, Xun
来源:Optics Communications, 2009, 282(1): 78-80.
DOI:10.1016/j.optcom.2008.09.072

摘要

Femtosecond lasers have proved to be effective tools for micromachining silicon carbide material. In the drilling process, however, when the debris around the hole was not removed efficiently, the depth of hole would not increase further. In this paper, alcohol-assisted photoetching of 6H silicon carbide was investigated using a femtosecond laser. Machining in the presence of alcohol was beneficial to the debris ejection from the hole. The alcohol flow and volatilization was also helpful to further carry away the ablation debris and reduce the ablated material redeposition. The experiment showed that photoetching assisted by alcohol produced cleaner ablation effect and deeper hole than in ambient air. Moreover, alcohol assistance would not produce additional thermal damage around the hole. Vias were formed in a 250 pm thick wafer with alcohol-assisted photoetching technique using a femtosecond laser, which demonstrated the potential for this processing technique.