A novel single event upset hardened CMOS SRAM cell

作者：Zhang Guohe; Shao Jun; Liang Feng^*; Bao Dongxuan

来源：IEICE Electronics Express, 2012, 9(3): 140-145.

DOI：10.1587/elex.9.140

• single event-upset
• radiation-hardened SRAM

This paper presents an improved design of a radiation-hardened static random access memory (SRAM). The simulation results based on the 0.18 mu m standard digital CMOS technology show that its static current drops dramatically compared with the WHIT cell, and the write speed is equivalent to that of other cells. The memory cell is extremely tolerant to logic upset as it does not flip even for a transient pulse with 100 times the critical charge of the ROCK cell. According to these features, this novel cell suits high reliability applications, such as aerospace and military.

• 出版日期2012-2-10
• 单位西安交通大学