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摘要
The paper presents the results of investigations on hydrogen trapping in the carbon films deposited in the plasma of four experimental devices (two laboratory stands, plasma accelerator QSPA-T and tokamak Tore Supra) covering a wide range of deposition conditions. The features of hydrogen trapping common for these devices are evaluated. It is shown that the trapping in the films of the certain device increases with the decrease of the deposition rate. Hydrogen from residual gas constitutes nearly half, or bigger part of the whole retention in the deposited films. It is trapped through inelastic interaction of the particles with the surface ("potential" mechanism of trapping). Ion irradiation and oxygen impurities activate the "potential" trapping. In conclusion some implications from the presented data are drawn.
- 出版日期2013-7
