Atomic Layer Deposition of Titanium Dioxide Thin Films from Cp*Ti(OMe)(3) and Ozone

作者：Rose Martin^*; Niinisto Jaakko; Michalowski Pawel; Gerlich Lukas; Wilde Lutz; Endler Ingolf; Bartha Johann W

来源：Journal of Physical Chemistry C, 2009, 113(52): 21825-21830.

DOI：10.1021/jp907940u

The thermal atomic layer deposition of TiO2 from Cp*Ti(OMe)(3) and ozone was Studied in a 300 mm wafer reactor by quadrupole mass spectrometry (QMS). The deposited thin films were analyzed by X-ray reflectivity (XRR), X-ray photoelectron spectroscopy (XPS), grazing incident X-ray diffraction, and time-of-flight secondary ion mass spectrometry (ToF-SIMS). The XRR and XPS measurements revealed that nearly stoichiometric TiO2 films were grown in a self-limiting growth mode. The growth per cycle increased from 0.22 angstrom at 235 degrees C to 0.29 angstrom at 330 degrees C. Films deposited oil titanium nitride showed an anatase crystal structure, while films deposited on ruthenium crystallized in the rutile phase. The ToF-SIMS analysis indicated that the carbon contamination reduced to very low levels at a deposition temperature of 295 degrees C. The QMS studies revealed the release of MeOH during the precursor pulse. CO2 and H2O were released during the ozone pulse at a Process Pressure of 7 mbar. At a pressure of 3 x 10(-3) mbar, the release of the Cp* ligand and the remaining OMe ligands during the ozone Pulse could be observed. It was demonstrated that QMS Studies can be used in a 300 mm reactor at very low pressures to study the process chemistry.

• 出版日期2009-12-31