Uprising nano memories: Latest advances in monolithic three dimensional (3D) integrated Flash memories

作者：Joodaki Mojtaba^*

来源：Microelectronic Engineering, 2016, 164: 75-87.

DOI：10.1016/j.mee.2016.07.009

• NAND Flash memory
• 3D integrated Flash memory
• Bit-cost scalable (BiCS) Flash memory
• Vertical recess array transistor (VRAT) Flash memory
• Vertical gate NAND (VG-NAND) Flash memory

Flash memory industry has showed remarkable steady progress during the last few years. This achievement is owed to the development of the 3D NAND Flash structures. This paper reviews the latest advances in the monolithic 3D integration of the NAND Flash memory. It highlights key technical challenges and uses important aspects and characteristics of various designs in order to illustrate mechanisms that overcome the technical barriers. Furthermore, the most promising solutions are marked by comparing advantages and disadvantages of different designs. Finally, future prospects and expected market demand of NAND Flash memory are addressed.

• 出版日期2016-10-1