n- and p-Channel field-effect transistors based on diquinoxalinoTTF derivatives

作者：Borjigin Naraso^*; Nishida Jun ichi; Tokito Shizuo; Theogarajan Luke; Yamashita Yoshiro

来源：Synthetic Metals, 2010, 160(21-22): 2323-2328.

DOI：10.1016/j.synthmet.2010.09.005

• TTF
• Tetrathiafulvalene
• Electron withdrawing
• Electron donating
• HOMO
• LUMO
• n-type FET
• p-type FET
• Field-effect transistor

Three new quinoxalinoTTF derivatives with methyl, trifluoromethyl and fluor groups were synthesized and characterized by UV-vis absorption spectroscopy, differential scanning calorimetry, X-ray single crystal analysis, X-ray diffraction, and field-effect transistor (FET) characteristics. All of them have pi-stacking structures in the single crystals. The quinoxalinoTTF derivative with trifluoromethyl groups exhibited an n-type FET, which is a rare example of n-channel FETs based on TTF derivatives. The highest electron mobility is 0.01 cm(2) V(-1) s. The FET polarity was converted to p-channel from n-channel by replacing the trifluoromethyl groups with methyl groups. The hole mobility is as high as 0.2 cm(2) V(-1) S. In contrast, the fluoro substituted derivative did not show FET properties due to the poorly ordered molecular arrangement.

• 出版日期2010-11