A Facile Route for Patterned Growth of Metal-Insulator Carbon Lateral Junction through One-Pot Synthesis

作者：Park Beomjin; Park Jaesung; Son Jin Gyeong; Kim Yong Jin; Yu Seong Uk; Park Hyo Ju; Chae Dong Hun; Byun Jinseok; Jeon Gumhye; Huh Sung; Lee Seoung Ki; Mishchenko Artem; Hyun Seung; Lee Tae Geol; Han Sang Woo; Ahn Jong Hyun; Lee Zonghoon; Hwang Chanyong; Novoselov Konstantin S; Kim Kwang S^*; Hong Byung Hee; Kim Jin Kon

来源：ACS Nano, 2015, 9(8): 8352-8360.

DOI：10.1021/acsnano.5b03037

• graphene
• amorphous carbon
• graphene-based heterostructure
• bottom-up growth
• graphene growth from polymer

Precise graphene patterning is of critical importance for tailor-made and sophisticated two-dimensional nanoelectronic and optical devices. However, graphene-based heterostructures have been grown by delicate multistep chemical vapor deposition methods, limiting preparation of versatile heterostructures. Here, we report one-pot synthesis of graphene/amorphous carbon (a-C) heterostructures from a solid source of polystyrene via selective photo-cross-linking process. Graphene is successfully grown from neat polystyrene regions, while patterned cross-linked polystyrene regions turn into a-C because of a large difference in their thermal stability. Since the electrical resistance of a-C is at least 2 orders of magnitude higher than that for graphene, the charge transport in graphene/a-C heterostructure occurs through the graphene region. Measurement of the quantum Hall effect in graphene/a-C lateral heterostructures clearly confirms the reliable quality of graphene and well-defined graphene/a-C interface. The direct synthesis of patterned graphene from polymer pattern could be further exploited to prepare versatile heterostructures.

• 出版日期2015-8