Narrow band gap (1 eV) InGaAsSbN solar cells grown by metalorganic vapor phase epitaxy

作者：Kim T W; Garrod T J; Kim K; Lee J J; LaLumondiere S D; Sin Y; Lotshaw W T; Moss S C; Kuech T F; Tatavarti Rao; Mawst L J^*

来源：Applied Physics Letters, 2012, 100(12): 121120.

DOI：10.1063/1.3693160

• antireflection coatings
• gallium arsenide
• III-V semiconductors
• indium compounds
• MOCVD
• narrow band gap semiconductors
• photoluminescence
• semiconductor epitaxial layers
• semiconductor growth
• semiconductor heterojunctions
• solar cells
• vapour phase epitaxial growth

Heterojunction solar cell structures employing InGaAsSbN (Eg similar to 1 eV) base regions are grown lattice-matched to GaAs substrates using metalorganic vapor phase epitaxy. Room temperature (RT) photoluminescence (PL) measurements indicate a peak spectral emission at 1.04 eV and carrier lifetimes of 471-576 ps are measured at RT from these structures using time-resolved PL techniques. Fabricated devices without anti-reflection coating demonstrate a peak efficiency of 4.58% under AM1.5 direct illumination. Solar cells with a 250 nm-thick InGaAsSbN base layer exhibit a 17% improvement in open circuit voltage (V-oc), 14% improvement in fill factor, and 12% improvement in efficiency over the cells with a thicker (500 nm-thick) base layer.

• 出版日期2012-3-19