Amorphous ZnO transparent thin-film transistors fabricated by fully lithographic and etching processes

作者：Hsieh Hsing Hung; Wu Chung Chih^*

来源：Applied Physics Letters, 2007, 91(1): 013502.

DOI：10.1063/1.2753724

Oxide-semiconductor-based thin-film transistors (TFTs), particularly the amorphous ones, are becoming an important emerging technology. Since oxide semiconductors easily form polycrystalline phases, usually more complicated oxide mixtures are needed for growing amorphous phases. In this letter, we report that by simply reducing the thickness, ZnO can be intentionally grown into the amorphous phase. Furthermore, both top-gate and bottom-gate amorphous ZnO TFTs of micrometer scales were effectively implemented using fully lithographic and etching processes. Rather high field-effect mobilities of 25 and 4 cm(2)/V s and on/off current ratios of >10(7) and >10(6) were achieved for top-gate and bottom-gate configurations, respectively.

• 出版日期2007-7-2
• 单位中国科学院电工研究所