Anomalously large resistance at the charge neutrality point in a zero-gap InAs/GaSb bilayer

作者:Yu, W.; Clerico, V; Hernandez Fuentevilla, C.; Shi, X.; Jiang, Y.; Saha, D.; Lou, W. K.; Chang, K.; Huang, D. H.; Gumbs, G.; Smirnov, D.; Stanton, C. J.; Jiang, Z.; Bellani, V; Meziani, Y.; Diez, E.*; Pan, W.*; Hawkins, S. D.; Klem, J. F.
来源:New Journal of Physics, 2018, 20(5): 053062.
DOI:10.1088/1367-2630/aac595

摘要

We report here our recent electron transport results in spatially separated two-dimensional electron and hole gases with nominally degenerate energy subbands, realized in an InAs(10 nm)/GaSb(5 nm) coupled quantum well. We observe a narrow and intense maximum (similar to 500 k Omega) in the four-terminal resistivity in the charge neutrality region, separating the electron-like and hole-like regimes, with a strong activated temperature dependence above T = 7 Kand perfect stability against quantizing magnetic fields. We discuss several mechanisms for that unexpectedly large resistance in this zero-gap semi-metal system including the formation of an excitonic insulator state.

  • 出版日期2018-5-31
  • 单位中国科学院