科研之友
微信
新浪微博
Facebook
分享链接
摘要
In this paper, we present simulation results on the optical and transport properties of InGaN/GaN core-shell nanorod light-emitting diodes. The influence of contact position, surface recombination, and doping configuration on internal quantum efficiency is examined. The qualitative behavior when adding an electron blocking layer and the dependence on In content have been studied.
- 出版日期2013-1
