Modeling defect transport during Cu oxidation

作者：Goldstein Eli A^*; Guer Turgut M; Mitchell Reginald E

来源：Corrosion Science, 2015, 99: 53-65.

DOI：10.1016/j.corsci.2015.05.067

• Copper
• Oxidation
• Modeling studies
• High temperature corrosion
• Kinetic parameters

A defect transport model describing Cu oxidation kinetics to Cu2O and CuO is presented. The model supports findings that the dominant defects in Cu2O are singly charged and neutral copper vacancies, and in CuO doubly charged copper vacancies. In this work, CuO is treated as a charge transfer insulator and from the model a reaction enthalpy for Cu vacancies in CuO was estimated to be 250 +/- 10 kJ/mole. Using the model, defect-diffusion coefficients are extracted from copper oxidation experiments and activation energies for vacancy-diffusion in Cu2O and CuO were found to be 54 kJ/mole and 32 kJ/mole, respectively.

• 出版日期2015-10