A High Gain 77 GHz Power Amplifier Operating at 0.7 V Based on 90 nm CMOS Technology

作者：Hamada Yasuhiro^*; Tanomura Masahiro; Ito Masaharu; Maruhashi Kenichi

来源：IEEE Microwave and Wireless Components Letters, 2009, 19(5): 329-331.

DOI：10.1109/LMWC.2009.2017613

• CMOSFET power amplifiers
• millimeter wave power amplifiers

A 77 GHz 90 nm CMOS power amplifier (PA) demonstrates a gain of 17.4 dB and a saturated output power of 5.8 dBm at a low supply voltage of 0.7 V. To take care of hot-carrier injection degradation, the supply voltage is reduced from a standard voltage of 1.0 V. The saturated output power is increased to 9.4 dBm with a linear gain of 20.6 dB at 1.0 V operation. The amplifier consists of three-stage common-source nMOSFETs with gate widths of 40, 80, and 160 pm. To our best knowledge, the developed PA shows the highest gain ever achieved for W-band CMOS amplifier. The measured temperature characteristics suggest that a simple compensation technique is possible by gate bias control.

• 出版日期2009-5