A regrowth method for the fabrication of high-quality ZnO films and their application in fast-response UV sensors

作者：Nam Giwoong; Kim Sungsu; Jo Euije; Kim Gyeongjae; Leem Jae Young; Son Jeong Sik; Kim Sung O

来源：Journal of the Korean Physical Society, 2017, 71(1): 47-53.

DOI：10.3938/jkps.71.47

• II-VI semiconductors
• Growth from vapor
• Photoluminescence
• Photodetectors

In this study, we fabricated high-quality ZnO films using hydrothermally grown ZnO nanorods and a spin-coated Al-doped ZnO film by using regrowth method. The phtoluminescence (PL) intensity ratios of the near-band-edge (NBE) to deep-level (DL) emission peaks (I (NBE) /I (DL) ) for ZnO nanorods (samples 1) and ZnO film (sample 2) were 2.13 and 24.3, respectively. The redshift from 3.288 (sample 2) to 3.278 eV (sample 1) and low I (NBE) /I (DL) ratio in PL spectra were attributed to large mismatch between ZnO and Si substrate, resulting in a residual stress and the low optical properties. In case of sample 2, the photocurrent was sharply increased without the exponential rise because of enhanced optical properties of ZnO film by regrowth. The regrowth method is expected to represent a possible route for fast-response ultraviolet sensors.

• 出版日期2017-7