Multiferroic BiMnO(3) thin films with double SrTiO(3) buffer layers

作者：Son J Y; Shin Y H^*

来源：Applied Physics Letters, 2008, 93(6): 062902.

DOI：10.1063/1.2970038

High quality BiMnO(3) thin films with double SrTiO(3) buffer layers were fabricated on Pt/Ti/SiO(2)/Si and SrTiO(3) substrates, in which SrTiO(3) buffer layers were used to reduce leakage current in BiMnO(3) thin films. The SrTiO(3) buffer layers had a thickness of about 5 nm obtained from the fitting of ellipsometer data, which gave the remarkable enhancement in leakage current. BiMnO(3) thin films exhibited the ferromagnetic transition with the Curie temperature of about 105 K. The Pt/SrTiO(3)/BiMnO(3)/SrTiO(3)/Pt and SrRuO(3)/SrTiO(3)/BiMnO(3)/SrTiO(3)/SrRuO(3) capacitors showed good ferroelectric properties with the remanent polarization of about 9 and 16 mu C/cm(2), respectively.

• 出版日期2008-8-11